ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：36

作者：

AKIMOTO, K

DOHSEN, M

ARAI, M

WATANABE, N

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 01期

关键词：

D O I：

10.1016/0022-0248(85)90337-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：117 / 122

页数：6

共 17 条

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[12] STRUCTURE-ANALYSIS OF OVAL DEFECT ON MOLECULAR-BEAM EPITAXIAL GAAS LAYER BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION [J].

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[13] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[15] THE MBE GROWTH OF GAAS FREE OF OVAL DEFECTS [J].

PETTIT, GD ;

WOODALL, JM ;

WRIGHT, SL ;

KIRCHNER, PD ;

FREEOUF, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :241-242

[16] ELECTRICAL-PROPERTIES OF OVAL DEFECTS IN GAAS GROWN BY MBE [J].

SHINOHARA, M ;

ITO, T ;

WADA, K ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L371-L373

[17] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS [J].

WOOD, CEC ;

RATHBUN, L ;

OHNO, H ;

DESIMONE, D .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :299-303

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