SPATIALLY RESOLVED PHOTOLUMINESCENCE AT OVAL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

被引：13

作者：

BAFLEUR, M ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

LAURET, N ^{[1
]}

BRABANT, JC ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,CNRS,PHYS SOLIDES LAB,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 66卷 / 02期

关键词：

D O I：

10.1016/0022-0248(84)90233-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：472 / 474

页数：3

共 7 条

[1] PHOTO-LUMINESCENCE OF MOLECULAR-BEAM EPITAXIALLY GROWN GE-DOPED GAAS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

CASTANO, JL ;

PIQUERAS, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2630-2634

[2] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

ROCHER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :531-538

[3] PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP [J].

BOHM, K ;

FISCHER, B .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5453-5460

[4] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION [J].

HWANG, JCM ;

BRENNAN, TM ;

CHO, AY .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :493-496

[5] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LEFUR, P .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+

[6] SHALLOW DEFECT ETCHING OF GAAS USING AB SOLUTION UNDER LASER ILLUMINATION [J].

MUNOZYAGUE, A ;

BAFLEUR, M .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :239-248

[7] LUMINESCENCE STUDIES OF A NEW LINE ASSOCIATED WITH GERMANIUM IN GAAS [J].

WILLIAMS, EW ;

ELLIOTT, CT .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (12) :1657-&

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