ORIGIN OF SURFACE-DEFECTS ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS

[1] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[2] KUBASCHEWSKI O, 1958, METALLURGICAL THERMO, P246

[3] AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 166 - 169

[4] SAMSONOV GV, 1973, OXIDE HDB, P381

[5] SHINOHARA M, 1984, UNPUB JPN J APPL PHY, V23

[6] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 299 - 303

[1] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[2] KUBASCHEWSKI O, 1958, METALLURGICAL THERMO, P246

[3] AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 166 - 169

[4] SAMSONOV GV, 1973, OXIDE HDB, P381

[5] SHINOHARA M, 1984, UNPUB JPN J APPL PHY, V23

[6] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 299 - 303