THE (001) SURFACE OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：43

作者：

PASHLEY, MD ^{[1
]}

HABERERN, KW ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1468 / 1471

页数：4

共 7 条

[1] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 834 - 837
[2] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES
FARRELL, HH
HARBISON, JP
PETERSON, LD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1482 - 1489
[3] HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDIES OF GAAS (100) SURFACES
FRANKEL, DJ
YU, C
HARBISON, JP
FARRELL, HH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1113 - 1118
[4] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
GHAISAS, SV
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546
[5] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[6] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY
PASHLEY, MD
HABERERN, KW
FRIDAY, W
WOODALL, JM
KIRCHNER, PD
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2176 - 2179
[7] THE EFFECT OF COOLING RATE ON THE SURFACE RECONSTRUCTION OF ANNEALED SILICON(111) STUDIED BY SCANNING TUNNELING MICROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION
PASHLEY, MD
HABERERN, KW
FRIDAY, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 488 - 492

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