MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES

被引：176

作者：

FARRELL, HH

HARBISON, JP

PETERSON, LD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.583660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1482 / 1489

页数：8

共 13 条

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