GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE

被引：187

作者：

LARSEN, PK

NEAVE, JH

VANDERVEEN, JF

DOBSON, PJ

JOYCE, BA

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

[2] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

[3] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,LONDON SW7 2AZ,ENGLAND

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.27.4966

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4966 / 4977

页数：12

共 36 条

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[5] THEORETICAL-STUDY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF THE CIS-4X4 RECONSTRUCTED GAAS(100)SURFACE
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[6] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS
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[7] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[8] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001)
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[9] EFFECT OF THE MADELUNG POTENTIAL ON SURFACE CORE-LEVEL SHIFTS IN GAAS
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[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (11) : 999 - 1002
[10] DIFFUSE-SCATTERING IN RHEED INDUCED BY LINEAR DISORDERS OF SULFUR SEGRATED ON NICKEL (111) SURFACE
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[J]. SURFACE SCIENCE, 1980, 100 (02) : 423 - 438

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