STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY

被引：523

作者：

PASHLEY, MD ^{[1
]}

HABERERN, KW ^{[1
]}

FRIDAY, W ^{[1
]}

WOODALL, JM ^{[1
]}

KIRCHNER, PD ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.60.2176

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2176 / 2179

页数：4

共 15 条

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[5] HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDIES OF GAAS (100) SURFACES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1113 - 1118
[6] A RHEED ARPES CORE LEVEL SPECTROSCOPIC EVALUATION OF THE STRUCTURE OF MBE-GROWN GAAS(001)-2X4 SURFACES
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[7] ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES
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[J]. PHYSICAL REVIEW B, 1984, 29 (02): : 814 - 819
[8] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 255 - 256
[9] LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222
[10] SURFACE-STRUCTURE OF AS-STABILIZED GAAS(001) - 2X4,C(2X8), AND DOMAIN-STRUCTURES
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[J]. PHYSICAL REVIEW B, 1988, 37 (14): : 8282 - 8288

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