ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY

被引：194

作者：

SAKAKI, H

TANAKA, M

YOSHINO, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.L417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L417 / L420

页数：4

共 8 条

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[2] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[3] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
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JOYCE, BA
DOBSON, PJ
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[4] SAKAKI H, 1984, 1983 P INT S F QUANT, P94
[5] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION
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FUNABASHI, H
OHTA, K
NAKAGAWA, T
KAWAI, NJ
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L657 - L659
[6] MONO-LAYER AND BI-LAYER SUPERLATTICES OF GAAS AND ALAS
SANO, N
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CHIKA, S
TERAUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L640 - L641
[7] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
[8] RED INTENSITY OSCILLATIONS DURING MBE OF GAAS
WOOD, CEC
[J]. SURFACE SCIENCE, 1981, 108 (02) : L441 - L443