DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE

被引：324

作者：

VANHOVE, JM

LENT, CS

PUKITE, PR

COHEN, PI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：741 / 746

页数：6

共 14 条

[1] ARTHUR JR, COMMUNICATION
[2] CLEARFIELD HM, UNPUB J VAC SCI TECH
[3] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[4] HARRIS JJ, 1981, SURF SCI, V108, pL444, DOI 10.1016/0039-6028(81)90440-4
[5] HENZLER M, 1977, ELECTRON SPECTROSCOP
[6] LENT CS, UNPUB SURF SCI
[7] THE RESOLVING POWER OF A LOW-ENERGY ELECTRON DIFFRACTOMETER AND THE ANALYSIS OF SURFACE-DEFECTS
LU, TM
LAGALLY, MG
[J]. SURFACE SCIENCE, 1980, 99 (03) : 695 - 713
[8] SURFACE SEGREGATION MODEL FOR SN-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ROCKETT, A
DRUMMOND, TJ
GREENE, JE
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7085 - 7087
[9] DISORDER ON GAAS(001) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY
VANHOVE, JM
COHEN, PI
LENT, CS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 546 - 550
[10] RHEED STREAKS AND INSTRUMENT RESPONSE
VANHOVE, JM
PUKITE, P
COHEN, PI
LENT, CS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 609 - 613