DISORDER ON GAAS(001) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY

被引：69

作者：

VANHOVE, JM ^{[1
]}

COHEN, PI ^{[1
]}

LENT, CS ^{[1
]}

机构：

[1] UNIV MINNESOTA, SCH PHYS & ASTRON, MINNEAPOLIS, MN 55455 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571951

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：546 / 550

页数：5

相关论文

共 17 条

[1] THEORETICAL-STUDY OF GAAS (100) SURFACE
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 751 - 756
[2] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1623 - 1632
[3] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
[4] SURFACE PHASES OF GAAS(100) AND ALAS(100)
BACHRACH, RZ
BAUER, RS
CHIARADIA, P
HANSSON, GV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 797 - 801
[5] Bauer E., 1969, TECHNIQUES DIRECT OB, VII, P501
[6] GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (11) : 467 - &
[7] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES
DRATHEN, P
RANKE, W
JACOBI, K
[J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166
[8] SURFACE RECONSTRUCTION ON SEMICONDUCTORS
HARRISON, WA
[J]. SURFACE SCIENCE, 1976, 55 (01) : 1 - 19
[9] HENZLER M, 1977, ELECTRON SPECTROSCOP
[10] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &