SURFACE SEGREGATION MODEL FOR SN-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：50

作者：

ROCKETT, A

DRUMMOND, TJ

GREENE, JE

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7085 / 7087

页数：3

共 14 条

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[3]

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[6]

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[8] SURFACE-COMPOSITION OF BINARY-ALLOYS [J].

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APPLICATIONS OF SURFACE SCIENCE, 1979, 3 (02) :121-144

[9]

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[10]

STANCHAK CM, 1981, REV SCI INSTRUM, V52, P438, DOI 10.1063/1.1136599

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