FREE-CARRIER AND INTERSUBBAND INFRARED-ABSORPTION IN P-TYPE SI1-XGEX/SI MULTIPLE-QUANTUM WELLS

被引：21

作者：

ZANIER, S ^{[1
]}

BERROIR, JM ^{[1
]}

GULDNER, Y ^{[1
]}

VIEREN, JP ^{[1
]}

SAGNES, I ^{[1
]}

GLOWACKI, F ^{[1
]}

CAMPIDELLI, Y ^{[1
]}

BADOZ, PA ^{[1
]}

机构：

[1] FRANCE TELECOM,CTR NATL ETUD TELECOMMUN GRENOBLE CNS,F-38243 MEYLAN,FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.51.14311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Infrared absorption has been investigated in high-quality p-type Si1-xGex/Si multiple quantum wells grown by UHV-chemical vapor deposition. Sample parameters have been chosen in order to obtain an intersubband absorption peak at λ10 μm. Direct transmission as well as transmission through multipass waveguides have been measured for various radiation polarizations, doping levels, and temperatures. Transmission of single uniformly doped SiGe epilayers has also been performed. Both intersubband and free-carrier absorptions have been quantitatively analyzed using a modified Drude model, while the valence states have been obtained from an envelope-function formalism. The relative contributions of both free carriers and intersubband transitions to the total absorbance have been accurately determined as a function of polarization and doping level. The absorption coefficients have been deduced for radiation electric field along the growth axis and parallel to the plane of the layers. Finally, the infrared absorption at normal incidence is discussed as well as the selection rules of the intersubband transitions. © 1995 The American Physical Society.

引用

页码：14311 / 14316

页数：6

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