BOUND-TO-BOUND INTERSUBBAND TRANSITIONS IN A DELTA-DOPED P-TYPE SI/SIXGE1-X/SI QUANTUM-WELL

被引：5

作者：

CHUN, SK

PAN, DS

WANG, KL

机构：

[1] Department of Electrical Engineering, University of California, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.108761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The absorption spectrum in p-type Si/Si0.6Ge0.4/Si structure with a delta-doped quantum well grown on Si(001) substrate is calculated using a multiband model. We have generalized the previous treatment of the depolarization effect in n-type Si to include subband multiplicity, nonparabolicity, and valence band anisotropy. An implicit formula for the effective plasma frequency was used to conveniently include these effects in the calculation. We found that it is necessary to treat the depolarization effect in the complicated couplings among valence bands in order to explain the observed spectrum.

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页码：1119 / 1121

页数：3

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