ORIGIN OF OPTICALLY INDUCED ELECTRON-SPIN-RESONANCE IN HYDROGENATED AMORPHOUS-SILICON

被引：40

作者：

YAMASAKI, S ^{[1
]}

OKUSHI, H ^{[1
]}

MATSUDA, A ^{[1
]}

TANAKA, K ^{[1
]}

ISOYA, J ^{[1
]}

机构：

[1] UNIV LIBRARY & INFORMAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.65.756

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Si29 hyperfine structure in an optically induced electron-spin-resonance spectrum has been detected in hydrogenated amorphous silicon using a pulsed technique. The optically induced ESR signal is accompanied by an increase in the subbandgap optical absorption. These observations suggest that the optically induced ESR signals originate from a localized state similar to the singly occupied dangling-bond state observed in dark, which is phenomenologically similar to the defect properties in chalcogenide glasses. © 1990 The American Physical Society.

引用

页码：756 / 759

页数：4

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