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FREQUENCY AND PULSE RESPONSE OF A NOVEL HIGH-SPEED INTERDIGITAL SURFACE PHOTOCONDUCTOR (IDPC)
被引:40
作者
:
SLAYMAN, CW
论文数:
0
引用数:
0
h-index:
0
SLAYMAN, CW
FIGUEROA, L
论文数:
0
引用数:
0
h-index:
0
FIGUEROA, L
机构
:
来源
:
ELECTRON DEVICE LETTERS
|
1981年
/ 2卷
/ 05期
关键词
:
D O I
:
10.1109/EDL.1981.25362
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:112 / 114
页数:3
相关论文
共 7 条
[1]
A HIGH-SPEED SI LATERAL PHOTODETECTOR FABRICATED OVER AN ETCHED INTERDIGITAL MESA
[J].
CHEN, CW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
CHEN, CW
;
GUSTAFSON, TK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
GUSTAFSON, TK
.
APPLIED PHYSICS LETTERS,
1980,
37
(11)
:1014
-1016
[2]
HOLE VELOCITY IN P-GAAS
[J].
DALAL, VL
论文数:
0
引用数:
0
h-index:
0
DALAL, VL
.
APPLIED PHYSICS LETTERS,
1970,
16
(12)
:489
-&
[3]
ENGEN H, 1969, IEEE T ELECTRON DEV, V16, P1014
[4]
FIGUEROA L, UNPUBLISHED
[5]
STATE-OF-THE-ART PERFORMANCE OF GAAIAS-GAAS AVALANCHE PHOTO-DIODES
[J].
LAW, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks, CA 91360
LAW, HD
;
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks, CA 91360
NAKANO, K
;
TOMASETTA, LR
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0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks, CA 91360
TOMASETTA, LR
.
APPLIED PHYSICS LETTERS,
1979,
35
(02)
:180
-182
[6]
MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
[J].
RUCH, JG
论文数:
0
引用数:
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RUCH, JG
;
KINO, GS
论文数:
0
引用数:
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KINO, GS
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APPLIED PHYSICS LETTERS,
1967,
10
(02)
:40
-&
[7]
HIGH-GAIN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS
[J].
SUGETA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
SUGETA, T
;
URISU, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
URISU, T
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
:1855
-1856
←
1
→
共 7 条
[1]
A HIGH-SPEED SI LATERAL PHOTODETECTOR FABRICATED OVER AN ETCHED INTERDIGITAL MESA
[J].
CHEN, CW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
CHEN, CW
;
GUSTAFSON, TK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
GUSTAFSON, TK
.
APPLIED PHYSICS LETTERS,
1980,
37
(11)
:1014
-1016
[2]
HOLE VELOCITY IN P-GAAS
[J].
DALAL, VL
论文数:
0
引用数:
0
h-index:
0
DALAL, VL
.
APPLIED PHYSICS LETTERS,
1970,
16
(12)
:489
-&
[3]
ENGEN H, 1969, IEEE T ELECTRON DEV, V16, P1014
[4]
FIGUEROA L, UNPUBLISHED
[5]
STATE-OF-THE-ART PERFORMANCE OF GAAIAS-GAAS AVALANCHE PHOTO-DIODES
[J].
LAW, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks, CA 91360
LAW, HD
;
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks, CA 91360
NAKANO, K
;
TOMASETTA, LR
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks, CA 91360
TOMASETTA, LR
.
APPLIED PHYSICS LETTERS,
1979,
35
(02)
:180
-182
[6]
MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
[J].
RUCH, JG
论文数:
0
引用数:
0
h-index:
0
RUCH, JG
;
KINO, GS
论文数:
0
引用数:
0
h-index:
0
KINO, GS
.
APPLIED PHYSICS LETTERS,
1967,
10
(02)
:40
-&
[7]
HIGH-GAIN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS
[J].
SUGETA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
SUGETA, T
;
URISU, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO 180,JAPAN
URISU, T
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
:1855
-1856
←
1
→