A HIGH-SPEED SI LATERAL PHOTODETECTOR FABRICATED OVER AN ETCHED INTERDIGITAL MESA

被引:4
作者
CHEN, CW [1 ]
GUSTAFSON, TK [1 ]
机构
[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
关键词
D O I
10.1063/1.91723
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1014 / 1016
页数:3
相关论文
共 7 条
[1]  
GODFREY LA, 1979, OPT SPECTRA, V10, P43
[2]  
MATHUR DP, 1968, IEDM WASHINGTON
[3]   PROPOSED NEW HIGH-SPEED OPTICAL DETECTOR [J].
MCCLEER, PJ ;
HADDAD, GI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :389-392
[4]   PHOTODETECTORS FOR OPTICAL COMMUNICATION SYSTEMS [J].
MELCHIOR, H ;
FISHER, MB ;
ARAMS, FR .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10) :1466-+
[5]  
SHAPIRO SL, 1977, ULTRASHORT LIGHT PUL
[6]   ANNEALING CHARACTERISTICS OF HIGHLY P+-ION-IMPLANTED SILICON CRYSTAL - 2-STEP ANNEAL [J].
UDA, K ;
KAMOSHIDA, M .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :18-21
[7]  
WAGGENER HA, 1967, ELECTRONICS, V40, P274