ANNEALING CHARACTERISTICS OF HIGHLY P+-ION-IMPLANTED SILICON CRYSTAL - 2-STEP ANNEAL

被引：25

作者：

UDA, K ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,DIV IC,KAWASAKI,JAPAN

来源：

关键词：

D O I：

10.1063/1.323307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：18 / 21

页数：4

共 10 条

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[4] KOJI T, TO BE PUBLISHED
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[6] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642
[7] TOKUYAMA T, 1975, J JAPAN SOC APPL PHY, V44, P596
[8] UDA K, 1976, T I ELECT COMMUN ENG, V59, P53
[9] UDA K, 1976, T IECE, V59, P52
[10] ANOMALOUS DIFFUSION OF PHOSPHORUS INTO SILICON
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (03) : 246 - +