ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES

被引：59

作者：

PRUSSIN, S ^{[1
]}

机构：

[1] TRW SEMICOND,LAWNDALE,CA 90260

来源：

关键词：

D O I：

10.1063/1.1663468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1635 / 1642

页数：8

共 12 条

[1] BICKNELL RW, 1971, 1ST INT C ION IMPL, P63
[2] DAVIDSON SM, 1971, 1ST P INT C ION IMPL, P51
[3] DAVIDSON SM, 1970, 1970 P EUR C ION IMP, P238
[4] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[5] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON
MAZEY, DJ
NELSON, RS
BARNES, RS
[J]. PHILOSOPHICAL MAGAZINE, 1968, 17 (150): : 1145 - &
[6] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
MCDONALD, RA
EHLENBERGER, GG
HUFFMAN, TR
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 807 - +
[7] GENERATION OF STACKING-FAULTS AND PRISMATIC DISLOCATION LOOPS IN DEVICE-PROCESSED SILICON WAFERS
PRUSSIN, S
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2850 - &
[8] GENERATION OF STACKING-FAULTS AND DISLOCATION LOOPS IN SILICON WAFERS
PRUSSIN, S
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 733 - &
[9] RAVI KV, 1973, FALL M EL SOC BOST M
[10] DISLOCATION LOOP NUCLEATION IN IRRADIATED METALS
RUSSELL, KC
POWELL, RW
[J]. ACTA METALLURGICA, 1973, 21 (03): : 187 - 193