GENERATION OF STACKING-FAULTS AND DISLOCATION LOOPS IN SILICON WAFERS

被引：11

作者：

PRUSSIN, S

机构：

来源：

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D O I：

10.1063/1.1661189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：733 / &

共 11 条

[1] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING
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[2] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN
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STRICKLE.R
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[3] SILICON DEFECT STRUCTURE INDUCED BY ARSENIC DIFFUSION AND SUBSEQUENT STEAM OXIDATION
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JOSHI, ML
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 453 - &
[4] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054
[5] STACKING FAULTS IN STEAM-OXIDIZED SILICON
JOSHI, ML
[J]. ACTA METALLURGICA, 1966, 14 (10): : 1157 - &
[6] LAURENCE JE, 1969, J APPL PHYS, V40, P360
[7] MAYER A, 1970, RCA REV, V31, P414
[8] GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION
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VANLOON, PGG
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 3066 - &
[9] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON
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DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (167): : 881 - &
[10] SURFACE DAMAGE AND COPPER PRECIPITATION IN SILICON
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[J]. PHYSICA STATUS SOLIDI, 1963, 3 (12): : 2261 - 2273