DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING

被引：101

作者：

BOOKER, GR

TUNSTALL, WJ

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1966年 / 13卷 / 121期

关键词：

D O I：

10.1080/14786436608211988

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / &

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