PROPOSED NEW HIGH-SPEED OPTICAL DETECTOR

被引:5
作者
MCCLEER, PJ
HADDAD, GI
机构
关键词
D O I
10.1109/T-ED.1978.19091
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:389 / 392
页数:4
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[1]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[2]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[3]   ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].
GILDEN, M ;
HINES, ME .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&
[4]   P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W ;
SPARKS, M ;
TEAL, GK .
PHYSICAL REVIEW, 1951, 83 (01) :151-162