REVERSE-BIAS CHARACTERISTICS OF A P+-N-N+ PHOTODIODE

被引：15

作者：

TANDON, JC

ROULSTON, DJ

CHAMBERLAIN, SG

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 06期

关键词：

D O I：

10.1016/0038-1101(72)90011-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：669 / +

页数：1

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共 11 条

[1] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE
ARANDJELOVIC, V
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +
[2] ARANDJELOVIC V, 1969, THESIS U LONDON
[3] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[4] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION
DEMARI, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +
[5] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
GARTNER, WW
[J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87
[6] UHF PHOTOPARAMETRIC AMPLIFIER
GRACE, MI
SAWYER, DE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 901 - &
[7] CONDITIONS AT A P-N JUNCTION IN THE PRESENCE OF COLLECTED CURRENT
MIDDLEBROOK, RD
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 555 - 571
[8] PHOTOPARAMETRIC AMPLIFIER
PENFIELD, P
SAWYER, DE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (04): : 340 - &
[9] LOW-NOISE PHOTOPARAMETRIC UP-CONVERTER
ROULSTON, DJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (04) : 431 - &
[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243