GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS

被引：36

作者：

DUTTA, NK

NELSON, RJ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 01期

关键词：

D O I：

10.1109/JQE.1982.1071358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：44 / 49

页数：6

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[7] CALCULATED TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS
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[8] DUTTA NK, 1982, J APPL PHYS JAN
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