THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS

被引：138

作者：

ASADA, M

ADAMS, AR

STUBKJAER, KE

SUEMATSU, Y

ITAYA, Y

ARAI, S

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：611 / 619

页数：9

共 27 条

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