VAPOR GROWTH OF GATE SINGLE-CRYSTALS

被引：15

作者：

MANCINI, AM

MANFREDO.C

RIZZO, A

MICOCCI, G

机构：

[1] CENTRO STUDI & APPL TECNOLOGIE AVANZATE,BARI,ITALY

[2] IST FIS,LECCE,ITALY

[3] IST FIS,70126 BARI,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 21卷 / 02期

关键词：

D O I：

10.1016/0022-0248(74)90003-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：187 / 190

页数：4

共 12 条

[1]

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[2] MELT GROWTH OF SINGLE-CRYSTAL INGOTS OF GASE BY BRIDGMAN-STOCKBARGERS METHOD [J].

CARDETTA, VL ;

MANCINI, AM ;

RIZZO, A .

JOURNAL OF CRYSTAL GROWTH, 1972, 16 (02) :183-&

[3] GROWTH AND HABIT OF GASE CRYSTALS OBTAINED FROM VAPOR BY VARIOUS METHODS [J].

CARDETTA, VL ;

RIZZO, A ;

MANFREDOTTI, C ;

MANCINI, AM .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :155-+

[4] ELECTRICAL RESISTIVITY AND HALL EFFECT OF SINGLE CRYSTALS OF GATE AND GASE [J].

FISCHER, G ;

BREBNER, JL .

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[5]

HARTMAN P, 1969, ACTA CRYSTALL A-CRYS, VA 25, pS237

[6] SURFACE BARRIERS ON LAYER SEMICONDUCTORS - GAS, GASE, GATE [J].

KURTIN, S ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (08) :2007-&

[7]

Lieth R. M. A., 1969, Journal of Crystal Growth, V5, P251, DOI 10.1016/0022-0248(69)90053-0

[8] CRYSTAL STRUCTURES OF SEMICONDUCTORS + GENERAL VALENCE RULE [J].

PEARSON, WB .

ACTA CRYSTALLOGRAPHICA, 1964, 17 (01) :1-&

[9]

SEMILETOV SA, 1963, KRISTALLOGRAFIA, V8, P876

[10] THERMISCHE UNTERSUCHUNGEN AN SULFIDEN .2. DAS THERMISCHE VERHALTEN DER SULFIDE DES GALLIUMS [J].

SPANDAU, H ;

KLANBERG, F .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1958, 295 (5-6) :300-308

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