ION-BEAM-INDUCED EPITAXY AND INTERFACIAL SEGREGATION OF AU IN AMORPHOUS-SILICON

被引：16

作者：

ELLIMAN, RG ^{[1
]}

JACOBSON, DC ^{[1
]}

LINNROS, J ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.98454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：314 / 316

页数：3

共 7 条

[1]

Baeri P., 1982, LASER ANNEALING SEMI

[2] ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON [J].

ELLIMAN, RG ;

WILLIAMS, JS ;

BROWN, WL ;

LEIBERICH, A ;

MAHER, DM ;

KNOELL, RV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :435-442

[3] ZONE-REFINING AND ENHANCEMENT OF SOLID-PHASE EPITAXIAL-GROWTH RATES IN AU-IMPLANTED AMORPHOUS SI [J].

JACOBSON, DC ;

POATE, JM ;

OLSON, GL .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :118-120

[4]

JACOBSON DC, IN PRESS MATER RES S, V74

[5] ION-BEAM-INDUCED EPITAXIAL REGROWTH OF AMORPHOUS LAYERS IN SILICON ON SAPPHIRE [J].

LINNROS, J ;

SVENSSON, B ;

HOLMEN, G .

PHYSICAL REVIEW B, 1984, 30 (07) :3629-3638

[6]

OLSON GL, 1985, MATER RES SOC S P, V35, P25

[7] DIFFUSION OF IMPLANTED IMPURITIES IN AMORPHOUS SI [J].

POATE, JM ;

JACOBSON, DC ;

WILLIAMS, JS ;

ELLIMAN, RG ;

BOERMA, DO .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :480-483

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