TEMPERATURE AND SIZE DEPENDENT EXCITONIC RELAXATION PROCESS IN GAAS/ALGAAS QUANTUM-WELLS

被引：8

作者：

JEONG, HS

LEE, IJ

SEO, JC

LEE, MY

KIM, DH

PARK, SJ

PARK, SH

KIM, U

机构：

[1] ELECTR & TELECOMMUN RES INST,BASIC RES DEPT,TAEJON 301350,SOUTH KOREA

[2] YONSEI UNIV,DEPT PHYS,SEOUL 120749,SOUTH KOREA

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 85卷 / 02期

关键词：

D O I：

10.1016/0038-1098(93)90357-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single photon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.

引用

页码：111 / 114

页数：4

共 15 条

[1]

BOTTCHER EH, 1987, APPL PHYS LETT, V50, P1074, DOI 10.1063/1.97974

[2] DYNAMICS OF EXCITON FORMATION AND RELAXATION IN GAAS QUANTUM-WELLS [J].