RECOMBINATION DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES

被引：70

作者：

FOUQUET, JE ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, RES STAFF, PALO ALTO, CA 94304 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1109/JQE.1986.1073154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1799 / 1810

页数：12

共 33 条

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[4] SCREENED COULOMBIC IMPURITY BOUND-STATES IN SEMICONDUCTOR QUANTUM WELLS
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[5] SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER
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[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4194 - +
[6] FREE-EXCITONS IN ROOM-TEMPERATURE PHOTOLUMINESCENCE OF GAAS-ALXGA1-XAS MULTIPLE QUANTUM WELLS
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[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7381 - 7383
[7] BROAD-BAND OPERATION OF COUPLED-STRIPE MULTIPLE QUANTUM WELL ALGAAS LASER-DIODES
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PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 779 - 780
[8] CARRIER TRAPPING IN ROOM-TEMPERATURE, TIME-RESOLVED PHOTOLUMINESCENCE OF A GAAS/ALXGA1-XAS MULTIPLE QUANTUM WELL STRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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SIEGMAN, AE
BURNHAM, RD
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 374 - 376
[9] ROOM-TEMPERATURE PHOTOLUMINESCENCE TIMES IN A GAAS ALXGA1-XAS MOLECULAR-BEAM EPITAXY MULTIPLE QUANTUM WELL STRUCTURE
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SIEGMAN, AE
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 280 - 282
[10] FOUQUET JE, 1986, THESIS STANFORD U ST

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