FREE-EXCITONS IN ROOM-TEMPERATURE PHOTOLUMINESCENCE OF GAAS-ALXGA1-XAS MULTIPLE QUANTUM WELLS

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[3] Elliott R. J., 1963, POLARONS EXCITONS

[4] QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186

[5] PHOTO-LUMINESCENCE OF AN ALAS-GAAS SUPER-LATTICE GROWN BY MBE IN THE 0.7-0.8-MU-M WAVELENGTH REGION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L623 - L626

[6] PHOTO-LUMINESCENCE OF ALXGA1-XAS/ALYGA1-YAS MULTIGUANTUM WELLS GROWN BY PULSED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L64 - L66

[7] ALAS-GAAS SUPER-LATTICES FOR OPTIMUM PHOTO-LUMINESCENCE INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 155 - 157

[8] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 647 - +

[9] LARGE ROOM-TEMPERATURE OPTICAL NONLINEARITY IN GAAS/GA1-X ALXAS MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 679 - 681

[10] THE ELECTRONIC ABSORPTION EDGE IN LAYER TYPE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (10) : 303 - 306

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[3] Elliott R. J., 1963, POLARONS EXCITONS

[4] QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186

[5] PHOTO-LUMINESCENCE OF AN ALAS-GAAS SUPER-LATTICE GROWN BY MBE IN THE 0.7-0.8-MU-M WAVELENGTH REGION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L623 - L626

[6] PHOTO-LUMINESCENCE OF ALXGA1-XAS/ALYGA1-YAS MULTIGUANTUM WELLS GROWN BY PULSED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L64 - L66

[7] ALAS-GAAS SUPER-LATTICES FOR OPTIMUM PHOTO-LUMINESCENCE INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 155 - 157

[8] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 647 - +

[9] LARGE ROOM-TEMPERATURE OPTICAL NONLINEARITY IN GAAS/GA1-X ALXAS MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 679 - 681

[10] THE ELECTRONIC ABSORPTION EDGE IN LAYER TYPE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (10) : 303 - 306