THRESHOLD SHIFT CALCULATIONS FOR ION IMPLANTED MOS DEVICES

被引：35

作者：

MACPHERSON, MR

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90124-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1319 / +

页数：1

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[6]

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LINDMAYER, J .

[8]

MACDOUGALL J, 1970, ELECTRONICS

[9]

MACDOUGALL JD, 1971, SOLID STATE TECHNOL, V14, P46

[10]

MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513