INFLUENCE OF OXYGEN ON PROPERTIES OF GAAS GROWN BY LIQUID-PHASE EPITAXY

被引：29

作者：

OTSUBO, M ^{[1
]}

SEGAWA, K ^{[1
]}

MIKI, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 06期

关键词：

D O I：

10.1143/JJAP.12.797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：797 / 803

页数：7

共 12 条

[1]

BROOKS H, 1955, ADV ELECTRONICS ELEC

[2] HIGH PURITY GAAS BY LIQUID PHASE EPITAXY [J].

HICKS, HGB ;

MANLEY, DF .

SOLID STATE COMMUNICATIONS, 1969, 7 (20) :1463-&

[3] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J].

KANG, CS ;

GREENE, PE .

APPLIED PHYSICS LETTERS, 1967, 11 (05) :171-&

[4]

KANG CS, 1969, 2ND P INT S GALL ARS, P18

[5] HIGH PURITY GAAS CRYSTALS GROWN BY LIQUID PHASE EPITAXY [J].

MIKI, H ;

OTSUBO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) :509-&

[6]

NAKAI D, PRIVATE COMMUNICATIO

[7]

NELSON H, 1963, RCA REV, V24, P603

[8]

SOLOMON R, 1969, 2ND P INT S GALL ARS, P11

[9]

VANDERPAUW LJ, 1958, PHILIPS RES REP, V13

[10] GROWTH AND PROPERTIES OF LPE GAAS [J].

VILMS, J ;

GARRETT, JP .

SOLID-STATE ELECTRONICS, 1972, 15 (04) :443-+

← 1 2 →