A HIGH-POWER HIGH-GAIN VD-MOSFET OPERATING AT 900 MHZ

被引:11
作者
ISHIKAWA, O
ESAKI, H
机构
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D O I
10.1109/T-ED.1987.23058
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1157 / 1162
页数:6
相关论文
共 7 条
[1]  
CARSON RS, 1975, HIGH FREQUENCY AMPLI
[2]  
Ishii K., 1983, International Electron Devices Meeting 1983. Technical Digest, P225
[3]  
LIN HC, 1975, IEEE T ELECTRON DEV, VED22, P255
[4]   SMALL-SIGNAL HIGH-FREQUENCY PERFORMANCE OF POWER MOS-TRANSISTORS [J].
MCGREGOR, P ;
MENA, J ;
SALAMA, CAT .
SOLID-STATE ELECTRONICS, 1984, 27 (05) :419-432
[5]  
Okabe T., 1980, International Electron Devices Meeting. Technical Digest
[6]   D-MOS TRANSISTOR FOR MICROWAVE APPLICATIONS [J].
SIGG, HJ ;
VENDELIN, GD ;
CAUGE, TP ;
KOCSIS, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) :45-&
[7]  
TARUI Y, 1969, 1ST P C SOL STAT DEV