SMALL-SIGNAL HIGH-FREQUENCY PERFORMANCE OF POWER MOS-TRANSISTORS

被引:2
作者
MCGREGOR, P
MENA, J
SALAMA, CAT
机构
关键词
D O I
10.1016/0038-1101(84)90148-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:419 / 432
页数:14
相关论文
共 27 条
[1]  
CARSON RS, 1975, HIGH FREQUENCY AMPLI, P16
[2]  
CARSON RS, 1975, HIGH FREQUENCY AMPLI, P68
[4]  
COLLINS H, 1979, ELECTRONIC DESIGN, V36
[5]  
DECLERCQ M, 1976, IEEE T ELECTRON DEV, V23
[6]  
GROVER W, 1946, INDUCTANCE CALCULATI, P35
[7]   IMPROVED MOS DEVICE PERFORMANCE THROUGH THE ENHANCED OXIDATION OF HEAVILY DOPED N+ SILICON [J].
HO, CP ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :623-630
[8]   COMPARISON OF VARIOUS SOURCE-GATE GEOMETRIES FOR POWER MOSFETS [J].
HOWER, PL ;
GEISLER, MJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1098-1101
[9]  
Kay S., 1979, IEDM TECH DIG, P97
[10]  
KHALFAN S, 1981, THESIS U TORONTO