EFFECTS OF DRIFT REGION PARAMETERS ON THE STATIC PROPERTIES OF POWER LDMOST

被引：41

作者：

COLAK, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 12期

关键词：

D O I：

10.1109/T-ED.1981.20630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1455 / 1466

页数：12

共 30 条

[1]

ABRAMOWITZ M, 1972, HDB MATH FUNCTIONS, pCH16

[2] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].

ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[3]

APPELS JA, 1979, IEDM, P238

[4] MODELLING OF SHORT-CHAMMEL MOS TRANSISTORS [J].

ARMSTRONG, GA ;

MAGOWAN, JA .

ELECTRONICS LETTERS, 1970, 6 (10) :313-+

[5]

AWANE K, 1978, ISSCC DIG TECH PAPER, P224

[6] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J].

BAUM, G ;

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) :481-+

[7] CORNER BREAKDOWN IN MOS-TRANSISTORS WITH LIGHTLY-DOPED DRAINS [J].

COE, DJ ;

BROCKMAN, HE .

SOLID-STATE ELECTRONICS, 1979, 22 (04) :444-445

[8] REVERSE AVALANCHE BREAKDOWN IN GATED DIODES [J].

COLAK, S ;

STUPP, EH .

SOLID-STATE ELECTRONICS, 1980, 23 (05) :467-472

[9] LATERAL DMOS POWER TRANSISTOR DESIGN [J].

COLAK, S ;

SINGER, B ;

STUPP, E .

ELECTRON DEVICE LETTERS, 1980, 1 (04) :51-53

[10]

COLAK S, 1980, IEEE POWER ELECTRON, P164

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