THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING

被引：108

作者：

ADLER, MS ^{[1
]}

TEMPLE, VAK ^{[1
]}

FERRO, AP ^{[1
]}

RUSTAY, RC ^{[1
]}

机构：

[1] GE, SCHENECTADY, NY 12301 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：107 / 113

页数：7

共 12 条

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[9] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

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