CORNER BREAKDOWN IN MOS-TRANSISTORS WITH LIGHTLY-DOPED DRAINS

被引：4

作者：

COE, DJ

BROCKMAN, HE

机构：

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 04期

关键词：

D O I：

10.1016/0038-1101(79)90100-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：444 / 445

页数：2

共 10 条

[1] DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS [J].

BATEMAN, IM ;

ARMSTRONG, GA ;

MAGOWAN, JA .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :539-550

[2] COMPARISON OF SIMPLE AND NUMERICAL 2-DIMENSIONAL MODELS FOR THRESHOLD VOLTAGE OF SHORT CHANNEL MOSTS [J].

COE, DJ ;

BROCKMAN, HE ;

NICHOLAS, KH .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :993-998

[3]

COE DJ, 1978, SOLID ST ELECTRON DE, V2, P57

[4] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H ;

MATSUMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+

[5]

GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[6] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].

GROVE, AS ;

LEISTIKO, O ;

HOOPER, WW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) :157-+

[7] DESIGN AND PERFORMANCE OF MICRON-SIZE DEVICES [J].

KLAASSEN, FM .

SOLID-STATE ELECTRONICS, 1978, 21 (03) :565-571

[8] A rapid method of predicting the sheet resistances of boron implanted layers [J].

Nicholas, K.H. .

Radiation Effects, 1976, 28 (3-4) :177-181

[9] CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS [J].

TEMPLE, VAK ;

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) :910-916

[10]

YOSHIDA I, 1976, IEEE J SOLID-ST CIRC, V11, P472, DOI 10.1109/JSSC.1976.1050761

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