DESIGN AND PERFORMANCE OF MICRON-SIZE DEVICES

[1] ABBAS SA, 1975, IEDM35 TECHN DIG

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[3] ELMANSY YA, 1975, IEDM31 TECHN DIG

[4] HIGH-PERFORMANCE MOS INTEGRATED-CIRCUIT USING ION-IMPLANTATION TECHNIQUE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) : 205 - 211

[5] GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[6] INTEGRATED INJECTION LOGIC - NEW APPROACH TO LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 346 - &

[7] LIMITATIONS IN MICROELECTRONICS .2. BIPOLAR TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1972, 15 (08) : 891 - +

[8] FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 819 - +

[9] HORI R, 1975, P C SOLID STATE DEVI, P193

[10] PHYSICAL LIMITS IN DIGITAL ELECTRONICS [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (05) : 740 - 767

[1] ABBAS SA, 1975, IEDM35 TECHN DIG

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[3] ELMANSY YA, 1975, IEDM31 TECHN DIG

[4] HIGH-PERFORMANCE MOS INTEGRATED-CIRCUIT USING ION-IMPLANTATION TECHNIQUE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) : 205 - 211

[5] GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[6] INTEGRATED INJECTION LOGIC - NEW APPROACH TO LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 346 - &

[7] LIMITATIONS IN MICROELECTRONICS .2. BIPOLAR TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1972, 15 (08) : 891 - +

[8] FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 819 - +

[9] HORI R, 1975, P C SOLID STATE DEVI, P193

[10] PHYSICAL LIMITS IN DIGITAL ELECTRONICS [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (05) : 740 - 767