HIGH-PERFORMANCE MOS INTEGRATED-CIRCUIT USING ION-IMPLANTATION TECHNIQUE

被引：28

作者：

FANG, FF

RUPPRECHT, HS

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,SYST PROD DIV,E FISHKILL,NY

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / 10卷 / 04期

关键词：

D O I：

10.1109/JSSC.1975.1050595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 211

页数：7

共 10 条

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DILL, HG ;

AUBUCHON, KG ;

THOMPSON, SA .

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[2] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI [J].

CROWDER, BL .

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[3] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].

FANG, FF ;

FOWLER, AB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[5]

FANG FF, 1970 TECH DIG INT EL, P80

[6]

FANG FF, 1973, J VAC SCI TECHNOL, V10, P1028

[7]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[8]

LINDHARD J, 1963, DANSKE VIDENSK SELSK, V33

[9] ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON [J].

MICHEL, AE ;

FANG, FF ;

PAN, ES .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :2991-2996

[10] LATERAL SPREAD OF ION-IMPLANTED IMPURITIES IN SILICON [J].

PAN, E ;

FANG, FF .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2801-2803

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