LATERAL SPREAD OF ION-IMPLANTED IMPURITIES IN SILICON

被引：14

作者：

PAN, E ^{[1
]}

FANG, FF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.1663678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2801 / 2803

页数：3

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[1] LATERAL SPREAD OF BORON IONS IMPLANTED IN SILICON
AKASAKA, Y
KAWAZU, S
HORIE, K
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 128 - &
[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS
COLMAN, D
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MIZE, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &
[3] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
FANG, FF
FOWLER, AB
[J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
[4] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS
FURUKAWA, S
ISHIWARA, H
MATSUMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +
[5] MICHEL A, TO BE PUBLISHED