FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY

[1] ALTMAN L, 1971, ELECTRONICS, V44, P50

[2] DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 11 (08) : 263 - &

[3] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[5] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[6] HOENEISEN B, TO BE PUBLISHED

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[8] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +

[9] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[10] EFFECT OF DEGENERATE SEMICONDUCTOR BAND STRUCTURE ON CURRENT-VOLTAGE CHARACTERISTICS OF SILICON TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (01): : 89 - &

[1] ALTMAN L, 1971, ELECTRONICS, V44, P50

[2] DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 11 (08) : 263 - &

[3] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[5] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[6] HOENEISEN B, TO BE PUBLISHED

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[8] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +

[9] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[10] EFFECT OF DEGENERATE SEMICONDUCTOR BAND STRUCTURE ON CURRENT-VOLTAGE CHARACTERISTICS OF SILICON TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (01): : 89 - &