REVERSE AVALANCHE BREAKDOWN IN GATED DIODES

[1] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 107 - 113

[2] MAXIMUM SURFACE AND BULK ELECTRIC-FIELDS AT BREAKDOWN FOR PLANAR AND BEVELED DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1266 - 1270

[3] TIME-DEPENDENT CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1297 - 1304

[4] SURFACE BREAKDOWN IN SILICON PLANAR DIODES EQUIPPED WITH FIELD PLATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 93 - +

[5] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 347 - 352

[6] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 313 - +

[7] GAUR SP, 1977, IBM J RES DEV, V306

[8] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[9] SARASWAT KC, 1974, 48299 STANF EL LAB T

[10] COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 669 - 679

[1] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 107 - 113

[2] MAXIMUM SURFACE AND BULK ELECTRIC-FIELDS AT BREAKDOWN FOR PLANAR AND BEVELED DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1266 - 1270

[3] TIME-DEPENDENT CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1297 - 1304

[4] SURFACE BREAKDOWN IN SILICON PLANAR DIODES EQUIPPED WITH FIELD PLATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 93 - +

[5] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 347 - 352

[6] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 313 - +

[7] GAUR SP, 1977, IBM J RES DEV, V306

[8] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[9] SARASWAT KC, 1974, 48299 STANF EL LAB T

[10] COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 669 - 679