MAXIMUM SURFACE AND BULK ELECTRIC-FIELDS AT BREAKDOWN FOR PLANAR AND BEVELED DEVICES

被引：22

作者：

ADLER, MS

TEMPLE, VAK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1109/T-ED.1978.19263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1266 / 1270

页数：5

相关论文

共 4 条

[1] GENERAL METHOD FOR PREDICTING AVALANCHE BREAKDOWN VOLTAGE OF NEGATIVE BEVELLED DEVICES
ADLER, MS
TEMPLE, VAK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) : 956 - 960
[2] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING
ADLER, MS
TEMPLE, VAK
FERRO, AP
RUSTAY, RC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 107 - 113
[3] ADLER MS, 75CRD149 TIS GEN EL
[4] CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
TEMPLE, VAK
ADLER, MS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) : 910 - 916