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GENERAL METHOD FOR PREDICTING AVALANCHE BREAKDOWN VOLTAGE OF NEGATIVE BEVELLED DEVICES
被引:24
作者
:
ADLER, MS
论文数:
0
引用数:
0
h-index:
0
机构:
GE, RES & DEV CLIN, SCHENECTADY, NY 12301 USA
GE, RES & DEV CLIN, SCHENECTADY, NY 12301 USA
ADLER, MS
[
1
]
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
GE, RES & DEV CLIN, SCHENECTADY, NY 12301 USA
GE, RES & DEV CLIN, SCHENECTADY, NY 12301 USA
TEMPLE, VAK
[
1
]
机构
:
[1]
GE, RES & DEV CLIN, SCHENECTADY, NY 12301 USA
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1976年
/ 23卷
/ 08期
关键词
:
D O I
:
10.1109/T-ED.1976.18516
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:956 / 960
页数:5
相关论文
共 9 条
[1]
ADLER MS, 1974, TECHNICAL DIGES 1210, P255
[2]
ADLER MS, 1973, TECHNICAL DIGES 1203, P105
[3]
ADLER MS, 1975, C RECORD IEEE PESC, P300
[4]
DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS
BAKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
BAKOWSKI, M
LUNDSTROM, KI
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
LUNDSTROM, KI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(06)
: 550
-
563
[5]
INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS
BAKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
BAKOWSKI, M
HANSSON, B
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
HANSSON, B
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(7-8)
: 651
-
&
[6]
FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES
CORNU, J
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR,BADEN 5401,SWITZERLAND
BROWN BOVERI RES CTR,BADEN 5401,SWITZERLAND
CORNU, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(04)
: 347
-
352
[7]
CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS
DAVIES, RL
论文数:
0
引用数:
0
h-index:
0
DAVIES, RL
GENTRY, FE
论文数:
0
引用数:
0
h-index:
0
GENTRY, FE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(07)
: 313
-
+
[8]
CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
TEMPLE, VAK
ADLER, MS
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
ADLER, MS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(10)
: 910
-
916
[9]
TEMPLE VAK, 1976, IEEE T ELECTRON DEV, V23, P948
←
1
→
共 9 条
[1]
ADLER MS, 1974, TECHNICAL DIGES 1210, P255
[2]
ADLER MS, 1973, TECHNICAL DIGES 1203, P105
[3]
ADLER MS, 1975, C RECORD IEEE PESC, P300
[4]
DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS
BAKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
BAKOWSKI, M
LUNDSTROM, KI
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
LUNDSTROM, KI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(06)
: 550
-
563
[5]
INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS
BAKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
BAKOWSKI, M
HANSSON, B
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
HANSSON, B
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(7-8)
: 651
-
&
[6]
FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES
CORNU, J
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR,BADEN 5401,SWITZERLAND
BROWN BOVERI RES CTR,BADEN 5401,SWITZERLAND
CORNU, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(04)
: 347
-
352
[7]
CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS
DAVIES, RL
论文数:
0
引用数:
0
h-index:
0
DAVIES, RL
GENTRY, FE
论文数:
0
引用数:
0
h-index:
0
GENTRY, FE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(07)
: 313
-
+
[8]
CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
TEMPLE, VAK
ADLER, MS
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
ADLER, MS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(10)
: 910
-
916
[9]
TEMPLE VAK, 1976, IEEE T ELECTRON DEV, V23, P948
←
1
→