COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS

[1] ALBRECHT C, TO BE PUBLISHED

[2] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +

[3] GENERAL ITERATIVE SCHEME FOR ONE-DIMENSIONAL CALCULATIONS OF STEADY-STATE ELECTRICAL PROPERTIES OF TRANSISTORS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1969, 27 (05) : 459 - +

[4] Calzolari P. U., 1969, Alta Frequenza, V38, P126

[5] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[6] CAUGHEY DM, 1967, IEEE INT ELECTRON C

[7] CAUGHEY DM, 1969, AUG P CORN C COMP EL, P369

[8] CHOO SC, 1971, IEEE T ELECTRON DEV, VED18, P574, DOI 10.1109/T-ED.1971.17244

[9] COLLINS TW, 1968, INT ELECTRON DEVICES

[10] DC NUMERICAL MODEL FOR ARBITRARILY BIASED BIPOLAR TRANSISTORS IN 2 DIMENSIONS [J]. ELECTRONICS LETTERS, 1970, 6 (03) : 53 - &

[1] ALBRECHT C, TO BE PUBLISHED

[2] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +

[3] GENERAL ITERATIVE SCHEME FOR ONE-DIMENSIONAL CALCULATIONS OF STEADY-STATE ELECTRICAL PROPERTIES OF TRANSISTORS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1969, 27 (05) : 459 - +

[4] Calzolari P. U., 1969, Alta Frequenza, V38, P126

[5] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[6] CAUGHEY DM, 1967, IEEE INT ELECTRON C

[7] CAUGHEY DM, 1969, AUG P CORN C COMP EL, P369

[8] CHOO SC, 1971, IEEE T ELECTRON DEV, VED18, P574, DOI 10.1109/T-ED.1971.17244

[9] COLLINS TW, 1968, INT ELECTRON DEVICES

[10] DC NUMERICAL MODEL FOR ARBITRARILY BIASED BIPOLAR TRANSISTORS IN 2 DIMENSIONS [J]. ELECTRONICS LETTERS, 1970, 6 (03) : 53 - &