GENERAL ITERATIVE SCHEME FOR ONE-DIMENSIONAL CALCULATIONS OF STEADY-STATE ELECTRICAL PROPERTIES OF TRANSISTORS

被引：7

作者：

ARANDJELOVIC, V

机构：

[1] Institut za nuklearne naukc, “B. Kidrič ”, Vinčca

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1969年 / 27卷 / 05期

关键词：

D O I：

10.1080/00207216908900066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An iterative method for numerical calculation of the steady-state electrical characteristics of transistors, already available in the literature, is improved and generalized. The set of variables which is chosen for formulating the numerical algorithm allows calculation of the steady-state transistor properties under arbitrary bias conditions. Complete freedom is available as regards the doping profile, recombination properties of the basic material, electrical characteristics of the external contacts, etc. The method, which reduces mathematically to two coupled two-point boundary value problems, is demonstrated by calculating the steady-state electrical characteristics of a double-diffused planar transistor structure. © 1969, Walter de Gruyter. All rights reserved.

引用

页码：459 / +

页数：1

共 10 条

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