NUMERICAL SOLUTION OF STEADY-STATE ELECTRIC PROPERTIES OF TRANSISTORS

被引:4
作者
ARANDJELOVIC, V
SPARKES, JJ
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D O I
10.1049/el:19670275
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:357 / +
页数:1
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共 9 条
[1]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[2]   ACCURATE NUMERICAL SOLUTION OF ONE-DIMENSIONAL P-NJUNCTION IN STEADY STATE [J].
DEMARI, A .
ELECTRONICS LETTERS, 1967, 3 (04) :142-&
[4]   POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION [J].
MORGAN, SP ;
SMITS, FM .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06) :1573-1602
[5]  
MURPHY GM, 1960, ORDINARY DIFFERENTIA, P14
[8]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[9]   THEORY OF THE FLOW OF ELECTRONS AND HOLES IN GERMANIUM AND OTHER SEMICONDUCTORS [J].
VANROOSBROECK, W .
BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04) :560-607