IMPROVED MOS DEVICE PERFORMANCE THROUGH THE ENHANCED OXIDATION OF HEAVILY DOPED N+ SILICON

被引:7
作者
HO, CP
PLUMMER, JD
机构
[1] Integrated Circuits Laboratory, Stanford University, Stanford
关键词
D O I
10.1109/T-ED.1979.19469
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The thermal oxidation of heavily doped silicon is well known to produce faster oxidation kinetics than lightly doped silicon. The physical mechanism responsible for this is reviewed, and quantitative data are presented which demonstrate that the effect is most pronounced over n+ regions on <100= substrates, oxidized at low temperatures in an H20 ambient. Understanding of this phenomenon allows it to be applied to a wide variety of technologies and device structures in which improved device performance is achieved simply through optimization of oxidation conditions. Specific examples of this improvement are described for NMOS and DMOS structures. Utilization of phenomena such as the one described here becomes increasingly important as devices and technology are pushed toward ultimate physical limits. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:623 / 630
页数:8
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