AVALANCHE BREAKDOWN IN HIGH-VOLTAGE D-MOS DEVICES

被引：36

作者：

DECLERCQ, MJ

PLUMMER, JD

机构：

[1] STANFORD UNIV, STANFORD, CA 94305 USA

[2] STANFORD UNIV, ELECTR LABS, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 01期

关键词：

D O I：

10.1109/T-ED.1976.18337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 4

页数：4

共 11 条

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