MELT GROWTH AND SOME ELECTRICAL-PROPERTIES OF GASB-ALSB SYSTEM

被引：8

作者：

AULOMBARD, RL

JOULLIE, A

机构：

[1] Centre d'Etudes d'Electronique, Solides Université des Sciences et Techniques du Languedoc, 34060 Montpellier, Place Eugène Bataillon

来源：

MATERIALS RESEARCH BULLETIN | 1979年 / 14卷 / 03期

关键词：

D O I：

10.1016/0025-5408(79)90100-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bulk ingots of polycrystalline Ga1-xAlxSb solid solutions have been prepared by a vertical Bridgman method. The variations of the alloy composition were studied along and normal to the growth axis, in connection with the imposed temperature gradient. The segregation of germanium and tellurium dopants was measured. The GaSb AlSb phase diagram has been investigated and theoretically calculated using a regular solution model. The electrical properties of the as grown alloys have been determined. n-type Ga1-xAlxSb alloys were obtained by Te doping as undoped crystals were p-type, with generally a carrier concentration of about 1017 cm-3. The variations versus T-1 of the Hall coefficient, the resistivity and the mobility are given for some p- and n-type samples. © 1979.

引用

页码：349 / 359

页数：11

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