ELECTRICAL-RESISTIVITY AND HALL-EFFECT IN TISE2 CONTAINING VANADIUM IMPURITIES

被引：30

作者：

LEVY, F

机构：

[1] Laboratoire de Physique Appliqde, EPF, Lausanne

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 18期

关键词：

D O I：

10.1088/0022-3719/12/18/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical properties of single crystals of Ti1-xV xSe2 (0<or=x<or=0.1) have been measured between room temperature and helium temperature. For concentrations near x=0.01 a strong increase of the resistivity ( rho (5K)/ rho (295K)>103) is found at low temperature. TiSe2 crystals with values of x 1% vanadium undergo a phase transition, shown by superlattice dots in electron diffraction diagrams. This does not support models where the phase transition is driven by carriers.

引用

页码：3725 / 3732

页数：8

共 20 条

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